The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Sep. 05, 2003
Applicants:
Christopher Harris, Täby, SE;
Andrei Konstantinov, Järfälla, SE;
Inventors:
Christopher Harris, Täby, SE;
Andrei Konstantinov, Järfälla, SE;
Assignee:
Cree Sweden AB, Kista, SE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
Method for producing a field effect transistor having a source region (), a drain region and a channel layer () interconnecting the source and drain regions, and including the step of providing a sacrificial layer () on part of a semiconductor material () whose edge is used to define the edge of an implant, such as the source region (), in the semiconductor material (), where the edge () of the sacrificial layer () is subsequently used to define the edge of a gate ().