The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Nov. 22, 2004
Jong-moo Huh, Hwaseong-si, KR;
Joon-hak OH, Seoul, KR;
Joon-hoo Choi, Seoul, KR;
In-su Joo, Seongnam-si, KR;
Beohm-rock Choi, Seoul, KR;
Jong-Moo Huh, Hwaseong-si, KR;
Joon-Hak Oh, Seoul, KR;
Joon-Hoo Choi, Seoul, KR;
In-Su Joo, Seongnam-si, KR;
Beohm-Rock Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.