The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Nov. 09, 2006
Lars Herlogsson, Link{hacek over (o)}ping, SE;
Göran Gustafsson, Linkoping, SE;
Olle-johnny Hagel, Linkoping, SE;
Mats Sandberg, Norrköping, SE;
Magnus Berggren, Vreta Kloster, SE;
Xavier Crispin, Kimstad, SE;
Nathaniel Robinson, Kolmdroen, SE;
Lars Herlogsson, Link{hacek over (o)}ping, SE;
Göran Gustafsson, Linkoping, SE;
Olle-Johnny Hagel, Linkoping, SE;
Mats Sandberg, Norrköping, SE;
Magnus Berggren, Vreta Kloster, SE;
Xavier Crispin, Kimstad, SE;
Nathaniel Robinson, Kolmdroen, SE;
Acreo AB, Kista, SE;
Abstract
A fast organic field effect transistor (), which operates at low voltages, is achieved by the introduction of an oligomeric or polymeric electrolyte () between the gate electrode () and the organic semiconductor layer (), which electrolyte () has a dissociation constant of at least 10−8. Said organic semiconductor layer () is in contact with the source electrode () and the drain electrode () of the transistor. In operation a potential () applied to said gate electrode () controls the current A between said source electrode () and said drain electrode ().