The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Feb. 07, 2006
Applicant:
Tokuya Kozaki, Anan, JP;
Inventor:
Tokuya Kozaki, Anan, JP;
Assignee:
Nichia Corporation, Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
In the nitride semiconductor device of the present invention, an active layeris sandwiched between a p-type nitride semiconductor layerand an n-type nitride semiconductor layer. The active layerhas, at least, a barrier layerhaving an n-type impurity; a well layermade of a nitride semiconductor that includes In; and a barrier layerthat has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layerbecomes possible by arranging the barrier layernearest to the p-type layer side.