The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Jul. 30, 2007
Thai Cheng Chua, Cupertino, CA (US);
James P. Cruse, Capitola, CA (US);
Cory Czarnik, Saratoga, CA (US);
Thai Cheng Chua, Cupertino, CA (US);
James P. Cruse, Capitola, CA (US);
Cory Czarnik, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H) and oxygen (O)—provided at a flow rate ratio of hydrogen (H) to oxygen (O) of up to about 3:1—or water vapor (HO vapor); and generating an inductively coupled plasma in the ion generation region of the chamber to form a silicon oxide layer on the substrate.