The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Nov. 09, 2006
Applicants:
Chang-seob Kim, Gwangju-si, KR;
Jeong-lim Nam, Yongin-si, KR;
Won-jin Kim, Suwon-si, KR;
Guk-hyon Yon, Suwon-si, KR;
Inventors:
Chang-Seob Kim, Gwangju-si, KR;
Jeong-Lim Nam, Yongin-si, KR;
Won-Jin Kim, Suwon-si, KR;
Guk-Hyon Yon, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device includes a charge trapping layer on a substrate, an insulating layer on the substrate adjacent to the charge trapping layer and exposing an upper surface of the charge trapping layer, a dielectric layer on the exposed charge trapping layer and on the insulating layer, and an electrode on the dielectric layer, the electrode corresponding to the charge trapping layer.