The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Jul. 23, 2007
Applicant:
Detlef Wilhelm, Regensburg, DE;
Inventor:
Detlef Wilhelm, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
Abstract
One or more embodiments relate to a method of making a heterojunction bipolar transistor (HBT) structure. The method includes: forming a partially completed heterojunction bipolar transistor (HBT) structure where the partially completed heterojunction bipolar transistor (HBT) structure includes a silicon layer having an exposed surface and a nitride layer having an exposed surface. The method includes growing a first oxide on the silicon layer and etching the nitride layer using an etchant.