The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Jun. 21, 2006
Corinne Maunand Tussot, Meylan, FR;
Christophe Maleville, La Terrasse, FR;
Hubert Moriceau, Saint Egreve, FR;
Alain Soubie, Saint Egreve, FR;
Corinne Maunand Tussot, Meylan, FR;
Christophe Maleville, La Terrasse, FR;
Hubert Moriceau, Saint Egreve, FR;
Alain Soubie, Saint Egreve, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Commissariat a l'Energie Atomique (CEA), Paris, FR;
Abstract
A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NHOH/HOat treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.