The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7643340 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 05, 2010

Filed:

Nov. 28, 2007
Applicants:

Jae-phil Kong, Hwaseong-si, KR;

Jae-yong Jeong, Yongin-si, KR;

Inventors:

Jae-Phil Kong, Hwaseong-si, KR;

Jae-Yong Jeong, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.


Find Patent Forward Citations

Kong, Jae-Phil. (2010). Method and apparatus for programming multi level cell flash memory device (U.S. Patent No. 7643340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7643340

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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