The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Apr. 16, 2008
Tetsuro Tamura, Kawasaki, JP;
Kentaro Kinoshita, Kawasaki, JP;
Tetsuro Tamura, Kawasaki, JP;
Kentaro Kinoshita, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An NMOS transistorhaving one end connected to one end of a resistance memory elementis provided, and when a voltage is applied to the resistance memory elementvia the NMOS transistorto switch the resistance memory elementfrom the low resistance state to the high resistance state, the gate voltage of the NMOS transistoris set at a value which is equal to or greater than the total of the reset voltage of the resistance memory elementand the threshold voltage of the NMOS transistorand is smaller than the total of the set voltage of the resistance memory elementand the threshold voltage of the NMOS transistor, whereby the voltage applied to the resistance memory elementis set at a value which is equal to or greater than the reset voltage and is smaller than the set voltage.