The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Apr. 01, 2009
Applicant:
Jung Joo Kim, Seoul, KR;
Inventor:
Jung Joo Kim, Seoul, KR;
Assignee:
Dongbu Electronics Co. Ltd., Seoul, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes an inter-metal dielectric (IMD) formed on a substrate and having at least one via hole, a via hole formed by filling the via hole with a first metal, a reductant layer formed on the via plug and the inter-metal dielectric to a predetermined thickness, and a metal line layer formed by depositing a second metal on the reductant layer.
Quick Actions:
Kim, Jung. (2010). Semiconductor device having a reductant layer and manufacturing method thereof (U.S. Patent No. 7642648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7642648
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile