The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jun. 23, 2009
Phillip D. Matz, Macungie, PA (US);
Stephan Grunow, Poughkeepsie, NY (US);
Satyavolu Srinivas Papa Rao, Garland, TX (US);
Phillip D. Matz, Macungie, PA (US);
Stephan Grunow, Poughkeepsie, NY (US);
Satyavolu Srinivas Papa Rao, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device, such as an inductor, is formed with an air gap. A first level has an intra-metal dielectric layer including one or more inductor loops, one or more vias, and one or more copper bulkhead structures. An inter-level dielectric layer is formed over the first level. An extraction via is formed through the intra-metal dielectric layer and inter-level dielectric layer. An air gap is formed between inductor loops by removing portions of the intra-metal dielectric layer coupled to the extraction via using a supercritical fluid process, and forming a non-conformal layer to seal the extraction via. The air gap may be filled with an inert gas, like argon or nitrogen.