The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Oct. 19, 2005
Yukiko Furukawa, Veldhoven, NL;
Vincent Venezia, Sunnyvale, CA (US);
Radu Surdeanu, Heverlee, BE;
NXP B.V., Eindhoven, NL;
Abstract
A metal-oxide-semiconductor (MOS) device having a body of single-crystal strontium titanate or barium titanate () is provided in which the body comprises a doped semiconductor region () adjacent a dielectric region (). The body may further comprise a doped conductive region separated from the semiconductor region by the dielectric region. The material characteristics of single-crystal strontium titanate when doped in various ways are exploited to provide the insulating, conducting and semiconducting components of a MOS stack. Advantageously, the use of a single body avoids the presence of interface layers between the stack components which improves the characteristics of MOS devices such as field effect transistors.