The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
May. 15, 2006
Yong-hoon Son, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
Deok-hyung Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Yong-Hoon Son, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Abstract
A field effect transistor includes a vertical fin-shaped semiconductor active region having an upper surface and a pair of opposing sidewalls on a substrate, and an insulated gate electrode on the upper surface and opposing sidewalls of the fin-shaped active region. The insulated gate electrode includes a capping gate insulation layer having a thickness sufficient to preclude formation of an inversion-layer channel along the upper surface of the fin-shaped active region when the transistor is disposed in a forward on-state mode of operation. Related fabrication methods are also discussed.