The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Mar. 22, 2007
Hirotaka Amasuga, Tokyo, JP;
Masahiro Totsuka, Tokyo, JP;
Hirotaka Amasuga, Tokyo, JP;
Masahiro Totsuka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A low-cost field-effect transistor with a moisture-resistant gate covered by a thick moisture-resistant insulating film which suppresses an increase in gate capacitance, and a method of manufacturing the field-effect transistor. The field-effect transistor has one of a T-shaped gate electrode and Γ-shaped gate electrode, a drain electrode, and a source electrode, the source electrode and the drain electrode being electrically connected through an n-doped semiconductor region. The gate, source, and drain electrodes are located on a semiconductor layer which includes an insulating film having a thickness of 50 nm or less and covering a surface of the gate electrode and a surface of the semiconductor layer. A silicon nitride film, deposited by catalytic CVD, covers the insulating film and includes a void volume located between a portion of the gate electrode corresponding to a canopy of an open umbrella and the semiconductor layer.