The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
May. 15, 2003
Applicants:
Stefan Bader, Eilsbrunn, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Hans-jürgen Lugauer, Sinzing, DE;
Inventors:
Stefan Bader, Eilsbrunn, DE;
Berthold Hahn, Hemau, DE;
Volker Härle, Laaber, DE;
Hans-Jürgen Lugauer, Sinzing, DE;
Assignee:
Osram GmbH, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.