The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Sep. 28, 2007
Applicant:
Ji Ho Hong, Hwaseong-si, KR;
Inventor:
Ji Ho Hong, Hwaseong-si, KR;
Assignee:
Dongbu Hitek Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A metal line of semiconductor device and a method of forming the same are provided. An interlayer dielectric (ILD) layer is formed on a semiconductor substrate including a lower line. A via hole is formed in the ILD layer, and a diffusion barrier layer is formed on the ILD layer where the via hole is formed. A copper seed layer and a copper plating layer are repeatedly formed and etched until the hole is completely filled.