The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jan. 30, 2006
Gayle W. Miller, Jr., Colorado Springs, CO (US);
Irwin D. Rathbun, Colorado Springs, CO (US);
Bryan D. Sendelweck, Colorado Springs, CO (US);
Thomas S. Moss, Iii, Colorado Springs, CO (US);
Gayle W. Miller, Jr., Colorado Springs, CO (US);
Irwin D. Rathbun, Colorado Springs, CO (US);
Bryan D. Sendelweck, Colorado Springs, CO (US);
Thomas S. Moss, III, Colorado Springs, CO (US);
Atmel Corporation, San Jose, CA (US);
Abstract
A method and system for providing a twin well in a semiconductor device is described. The method and system include masking a first portion of the device such that a second portion of the device is exposed. A sacrificial layer has a first portion on the first portion of the device and a second portion on the second portion of the device. In one aspect, an oxidation stop layer may be below the sacrificial layer. The method and system include implanting a first well in the second portion of the device, exposing the first portion of the device after the first well is implanted, and oxidizing the second portion of sacrificial layer after the exposing. The method and system further include implanting the second well in the first portion of the device after the oxidizing and planarizing the device after the second well is implanted.