The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Aug. 08, 2005
Hajime Ikeda, Chigasaki, JP;
Kazuya Notsu, Chigasaki, JP;
Nobuhiko Sato, Sagamihara, JP;
Shoji Nishida, Hiratsuka, JP;
Hajime Ikeda, Chigasaki, JP;
Kazuya Notsu, Chigasaki, JP;
Nobuhiko Sato, Sagamihara, JP;
Shoji Nishida, Hiratsuka, JP;
Canon Kabuhsiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.