The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Sep. 26, 2006
Shoichi Yamauchi, Nagoya, JP;
Takumi Shibata, Tajimi, JP;
Tomonori Yamaoka, Tokyo, JP;
Syouji Nogami, Tokyo, JP;
Shoichi Yamauchi, Nagoya, JP;
Takumi Shibata, Tajimi, JP;
Tomonori Yamaoka, Tokyo, JP;
Syouji Nogami, Tokyo, JP;
DENSO CORPORATION, Kariya, JP;
Sumco Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×10×ln(β)−1×10.