The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Nov. 30, 2006
Takayuki Iwaki, Kanagawa, JP;
Takayuki Iwaki, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A method for manufacturing a semiconductor device includes: sequentially depositing a gate insulating filmcomposed of a high dielectric constant film containing one or more metallic element(s) selected from a group consisting of Hf, Zr, Al, La and Ta, a barrier filmcomposed of one or more metal nitride selected from a group consisting of TiN, TaN and WN, a metallic filmand a polycrystalline silicon filmon the semiconductor substrate (p-type semiconductor substrate) to form a multiple-layered film; and silicidizing a lower portion of the polycrystalline silicon filmto form a lower layer (forming a first silicide layer) by conducting a heat treatment of the multiple-layered film to diffuse the metal of the metallic filminto the polycrystalline silicon film
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile