The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Oct. 05, 2007
Steven Alfred Tysoe, Ballston Spa, NY (US);
Dong-sil Park, Niskayuna, NY (US);
John Thomas Leman, Niskayuna, NY (US);
Mark Philip D'evelyn, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Steven Alfred Tysoe, Ballston Spa, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
John Thomas Leman, Niskayuna, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Huicong Hong, Niskayuna, NY (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 10cm.