The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Apr. 20, 2009
Odd Harald Steen Eriksen, Brooklyn Park, MN (US);
Kimiko J. Childress, Farmington, MN (US);
Shuwen Guo, Lakeville, MN (US);
Odd Harald Steen Eriksen, Brooklyn Park, MN (US);
Kimiko J. Childress, Farmington, MN (US);
Shuwen Guo, Lakeville, MN (US);
Rosemount Aerospace Inc., Burnsville, MN (US);
Abstract
A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.