The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Nov. 21, 2005
Hiroshi Usui, Niiza, JP;
Tomoyasu Yamada, Niiza, JP;
Masaaki Shimada, Niiza, JP;
Sanken Electric Co., Ltd., Saitama, JP;
Abstract
The ON duration of an N channel MOS transistor is set based on a target voltage at a node between a resistor and a light receiving element of a photocoupler. A comparator compares the target voltage with a reference voltage at a node between a variable resistor and a resistor. A normal mode and a low frequency operation mode are switched from one to the other based on an output signal from the comparator. The resistance of the variable resistor becomes low when an input voltage from a power source is high. Even when the input voltage is high, therefore, the ON duration of the N channel MOS transistor at the transition between the normal mode and the low frequency operation mode becomes short. This reduces the switching energy in low frequency operation mode, thereby suppressing noise.