The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Mar. 09, 2007
Applicants:
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Inventors:
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power semiconductor device having a low loss and a high reliability and a power conversion device using the power semiconductor device are provided. In the power semiconductor device, a plurality of MOS type trench gates are positioned to be spaced by at-least two types of intervals therebetween, a low-resistance floating nlayer is positioned on a main surface of a semiconductor substrate adjacent to a floating p layer positioned between the adjacent MOS type trench gates having the broad interval to achieve consistency between a low output value and a high breakdown resistance.