The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Jan. 17, 2005
Lay-lay Chua, Singapore, SG;
Peter Kian-hoon Ho, Singapore, SG;
Richard Henry Friend, Cambridge, GB;
Lay-Lay Chua, Singapore, SG;
Peter Kian-Hoon Ho, Singapore, SG;
Richard Henry Friend, Cambridge, GB;
Cambridge Enterprise Ltd, Cambridge, GB;
Abstract
An n-channel or ambipolar field-effect transistor including an organic semiconductive layer having an electron affinity EA; and an organic gate dielectric layer forming an interface with the semiconductive layer; characterized in that the bulk concentration of trapping groups in the gate dielectric layer is less than 10cm, where a trapping group is a group having (i) an electron affinity EAgreater than or equal to EAand/or (ii) a reactive electron affinity EAgreater than or equal to (EA−2 eV).