The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Mar. 05, 2008
Applicant:
Manijeh Razeghi, Wilmette, IL (US);
Inventor:
Manijeh Razeghi, Wilmette, IL (US);
Assignee:
MP Technologies, LLC, Evanston, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An improved photodiode and method of producing an improved photodiode comprising doping an InAs layer of an InAs/GaSb region situated on top of an InAs/GaSb:Be superlattice and below an InAs:Si/GaSb regions such that the quantum efficiency of the photodiode increases and dominant dark current mechanisms change from diffusion to band-to-band tunneling as the InAs layer is doped with Beryllium.
Razeghi, Manijeh. (2009). Inas/gasb infrared superlattice photodiodes doped with beryllium (U.S. Patent No. 7638791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7638791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile