The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Jan. 10, 2006
Benoît Froment, Grenoble, FR;
Delphine Aime, Grenoble, FR;
Benoît Froment, Grenoble, FR;
Delphine Aime, Grenoble, FR;
STMicroelectronics (Crolles 2) SAS, Crolles Cedex, FR;
Abstract
An MOS transistor with a fully silicided gate is produced by forming a silicide compound in the gate separately and independently of silicide portions located in source and drain zones of the transistor. To this end, the silicide portions of the source and drain zones are covered by substantially impermeable coatings. The coatings prevent the silicide portions of the source and drain zones from increasing in volume during separate and independent formation of the gate silicide compound. The silicide gate may thus be thicker than the silicide portions of the source and drain zones.