The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2009

Filed:

Feb. 02, 2007
Applicants:

Jung-eun Lee, Seoul, KR;

Young-jin Wee, Seongnam-si, KR;

Andrew-tae Kim, Yongin-si, KR;

Young-joon Moon, Seoul, KR;

Inventors:

Jung-eun Lee, Seoul, KR;

Young-jin Wee, Seongnam-si, KR;

Andrew-tae Kim, Yongin-si, KR;

Young-joon Moon, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a first barrier metal film on sidewalls of the opening and the exposed first metal wire; etching a portion of the first barrier metal film on the first metal wire to expose a surface portion of the first metal wire; performing a heat treatment process on the exposed surface portion of the first metal wire to improve surface roughness; and forming a second wire by filling the opening using a conductive material.


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