The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Nov. 06, 2008
Cheol Hwan Park, Gyeonggi-do, KR;
Ho Jin Cho, Gyeonggi-do, KR;
Jae Soo Kim, Seoul, KR;
Dong Kyun Lee, Seoul, KR;
Cheol Hwan Park, Gyeonggi-do, KR;
Ho Jin Cho, Gyeonggi-do, KR;
Jae Soo Kim, Seoul, KR;
Dong Kyun Lee, Seoul, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.