The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Jun. 27, 2007
Yong-kyu Lee, Gwacheon-si, KR;
Hee-seog Jeon, Suwon-si, KR;
Jeong-uk Han, Suwon-si, KR;
Young-ho Kim, Hwaseong-si, KR;
Myung-jo Chun, Hwaseong-si, KR;
Yong-Kyu Lee, Gwacheon-si, KR;
Hee-Seog Jeon, Suwon-si, KR;
Jeong-Uk Han, Suwon-si, KR;
Young-Ho Kim, Hwaseong-si, KR;
Myung-Jo Chun, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A mask read-only memory (ROM) includes a dielectric layer formed on a substrate and a plurality of first conductive lines formed on the dielectric layer. A plurality of diodes are formed in the first conductive lines, and a plurality of final vias are formed for a first set of the diodes each representing a first type of memory cell, with no final via being formed for a second set of diodes each representing a second type of memory cell. Each of a plurality of second conductive lines is formed over a column of the diodes.