The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Aug. 06, 2009
Yi-kai Wang, Hsinchu, TW;
Tsung-hsien Lin, Hsinchu, TW;
Tarng-shiang HU, Hsinchu, TW;
Yu-yuan Shen, Yunlin County, TW;
Yi-Kai Wang, Hsinchu, TW;
Tsung-Hsien Lin, Hsinchu, TW;
Tarng-Shiang Hu, Hsinchu, TW;
Yu-Yuan Shen, Yunlin County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.