The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
May. 31, 2006
Method of manufacturing silicon nanowires and device comprising silicon nanowires formed by the same
Eun Kyung Lee, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Soon Jae Kwon, Seongnam-si, KR;
Kyung Sang Cho, Gwacheon-si, KR;
Jae Ho Lee, Yongin-si, KR;
Eun Kyung Lee, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Soon Jae Kwon, Seongnam-si, KR;
Kyung Sang Cho, Gwacheon-si, KR;
Jae Ho Lee, Yongin-si, KR;
Abstract
A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.