The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Feb. 24, 2006
Kenichi Tochi, Tokyo, JP;
Masahiro Miyazaki, Tokyo, JP;
Takao Noguchi, Tokyo, JP;
Hiroshi Yamazaki, Tokyo, JP;
Ken Unno, Tokyo, JP;
Hirofumi Sasaki, Tokyo, JP;
Kenichi Tochi, Tokyo, JP;
Masahiro Miyazaki, Tokyo, JP;
Takao Noguchi, Tokyo, JP;
Hiroshi Yamazaki, Tokyo, JP;
Ken Unno, Tokyo, JP;
Hirofumi Sasaki, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device)according to the present invention, an outer edge Rof a piezoelectric filmA formed on an electrode filmA of a laminateis located inside an outer edge Rof the electrode filmA. For this reason, in removal of a monocrystalline Si substratefrom a multilayer board, where an etching solution permeates between polyimideand laminate, the etching solution circumvents the electrode filmA before it reaches the piezoelectric filmA. Namely, a route A of the etching solution to the piezoelectric filmA is significantly extended by the electrode filmA. In the method of making the electronic device, therefore, the etching solution is less likely to reach the piezoelectric filmA. It significantly suppresses a situation of dissolution of the piezoelectric filmA and realizes improvement in characteristics of the piezoelectric devicemade.