The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Feb. 06, 2008
Applicant:
Tao Peng, Santa Clara, CA (US);
Inventor:
Tao Peng, Santa Clara, CA (US);
Assignee:
Xilinx, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A static random access memory ('SRAM') has a plurality of SRAM cells connected to a word line. A static noise margin ('SNM') detector controls a pull-down transistor that selectively couples the word line to a ground path. The SNM detector is configured to produce a first output signal in response to a SNM event that couples the word line to the ground path, and otherwise produces a second output signal that de-couples the word line from the ground path.
Quick Actions:
Peng, Tao. (2009). Integrated circuit with improved static noise margin (U.S. Patent No. 7636268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7636268
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile