The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Oct. 04, 2007
Nicholas D. Rizzo, Gilbert, AZ (US);
Renu Dave, Chandler, AZ (US);
Jon M. Slaughter, Tempe, AZ (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Renu Dave, Chandler, AZ (US);
Jon M. Slaughter, Tempe, AZ (US);
Srinivas V. Pietambaram, Chandler, AZ (US);
Everspin Technologies, Inc., Chandler, AZ (US);
Abstract
Low power magnetoelectronic device structures and methods for making the same are provided. One magnetoelectronic device structure () comprises a programming line (), a magnetoelectronic device () magnetically coupled to the programming line, and an enhanced permeability dielectric material () disposed adjacent the magnetoelectronic device. The enhanced permeability dielectric material has a permeability no less than approximately 1.5. A method for making a magnetoelectronic device structure is also provided. The method comprises fabricating a magnetoelectronic device () and depositing a conducting line (). A layer of enhanced permeability dielectric material () having a permeability no less than approximately 1.5 is formed, wherein after the step of fabricating a magnetoelectronic device and the step of depositing a conducting line, the layer of enhanced permeability dielectric material is situated adjacent the magnetoelectronic device.