The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Apr. 02, 2007
Hideki Asano, Ashigarakami-gun, JP;
Hideki Asano, Ashigarakami-gun, JP;
FUJIFILM Corporation, Tokyo, JP;
Abstract
A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BAlGaN, wherein x represents a number satisfying the condition 0<x<1, y represents a number satisfying the condition 0≦y<1, and z represents a number satisfying the condition 0<z<1, with the proviso that x+y+z=1, the semiconductor layer having been formed with a laser assisted metalorganic vapor phase epitaxy technique. A semiconductor light emitting device comprises the semiconductor layer and may be constituted as a semiconductor laser or a light emitting diode.