The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7635859 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 22, 2009

Filed:

Dec. 28, 2005
Applicants:

Sang Kyun Lee, Seongnam-Si, KR;

Won Jae Joo, Hwaseong-Si, KR;

Chul Hee Kim, Incheon-Si, KR;

Yoon Sok Kang, Seongnam-Si, KR;

Inventors:

Sang Kyun Lee, Seongnam-Si, KR;

Won Jae Joo, Hwaseong-Si, KR;

Chul Hee Kim, Incheon-Si, KR;

Yoon Sok Kang, Seongnam-Si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.


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Lee, Sang. (2009). Memory device including dendrimer (U.S. Patent No. 7635859). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7635859

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