The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Nov. 15, 2005
Applicant:
Sungkwon C. Hong, Boise, ID (US);
Inventor:
Sungkwon C. Hong, Boise, ID (US);
Assignee:
Aptina Imaging Corporation, Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/6242 (2006.01);
U.S. Cl.
CPC ...
Abstract
A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels in an array includes a capacitor and readout circuitry with NMOS transistors. Periphery circuitry around the array can include PMOS transistors. Because the silicide layer is formed after the conductive layers, it is not exposed to high temperatures and, therefore, migration and cross-contamination of dopants is reduced.