The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Dec. 30, 2005
Applicants:
Tsun-neng Yang, Taoyuan, TW;
Shan-ming Lan, Taoyuan, TW;
Inventors:
Tsun-Neng Yang, Taoyuan, TW;
Shan-Ming Lan, Taoyuan, TW;
Assignee:
Atomic Energy Council - Institute of Nuclear Energy Research, Taouyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for making a light emitting diode (LED) through a silica film growth, an annealing treatment and a surface treatment so that the LED whose spectrum covers the whole red-light zone of a white-light spectrum is obtained with stability, economy, environmental protection and high efficiency.
Yang, Tsun-Neng. (2009). Method for making red-light emitting diode having silicon quantum dots (U.S. Patent No. 7635603). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7635603
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile