The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Nov. 16, 2005
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Robert A. Barrowcliff, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A photovoltaic (PV) structure is provided, along with a method for forming a PV structure with a conductive nanowire array electrode. The method comprises: forming a bottom electrode with conductive nanowires; forming a first semiconductor layer of a first dopant type (i.e., n-type) overlying the nanowires; forming a second semiconductor layer of a second dopant type, opposite of the first dopant type (i.e., p-type), overlying the first semiconductor layer; and, forming a top electrode overlying the second semiconductor layer. The first and second semiconductor layers can be a material such as a conductive polymer, a conjugated polymer with a fullerene derivative, and inorganic materials such as CdSe, CdS, Titania, or ZnO. The conductive nanowires can be a material such as IrO, InO, SnO, or indium tin oxide (ITO).