The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Jun. 22, 2004
Yun Ho Jung, Seoul, KR;
Yun Ho Jung, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without rotation of a stage, wherein the laser crystallization device is includes a mask including first and second regions, the first region having an open part oriented in the X-axis direction, and the second region having an open part oriented in the Y-axis direction. A crystallization method includes positioning a substrate having an amorphous silicon layer on a stage; arranging a mask corresponding to the substrate to form first and second crystallizing blocks on irradiation of laser beam, the mask including a first region having a plurality of open parts oriented along the X-axis direction, and a second region having a plurality of open parts oriented along the Y-axis direction; crystallizing the substrate along the X-axis direction when the first region is open, and the stage is moved along the X-axis direction; and crystallizing the substrate along for the Y-axis direction of when the second region is open, and the stage is moved along the Y-axis direction.