The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Jan. 31, 2005
Applicants:
Tsung Y. Chen, San Jose, CA (US);
Yinshi Liu, Foster City, CA (US);
Inventors:
Tsung Y. Chen, San Jose, CA (US);
Yinshi Liu, Foster City, CA (US);
Assignee:
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/147 (2006.01); G11B 5/127 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for controlling the formation of the trailing shield gap during perpendicular head fabrication and head formed thereby are disclosed. The in-situ trailing shield gap deposition process removes the pre-sputter process that can damage the write pole material. Further, a seed pre-layer is formed on top of the trailing shield gap to absorb any non-uniformity of the trailing shield gap and to control issues resulting from the pre-sputter process originating from the trailing shield seed deposition.