The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7633161 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 15, 2009

Filed:

Oct. 20, 2008
Applicant:

Sung Ho Jang, Seoul, KR;

Inventor:

Sung Ho Jang, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
Abstract

Technologies related to forming metal lines of a semiconductor device are disclosed. A method of forming metal lines of a semiconductor device may include forming at least one interlayer insulating layer on a semiconductor substrate, forming via holes and trenches in the at least one interlayer insulating layer, forming an anti-diffusion film on the via holes and the trenches, depositing a seed Cu layer on the anti-diffusion film, after the seed Cu layer is deposited, depositing rhodium (Rh), and forming Cu line on the deposited Rh. The Rh improves an adhesive force between Cu layers and prevents oxide materials or a corrosion phenomenon from occurring on the seed Cu layer. Accordingly, occurrence of delamination in subsequent processes (for example, annealing and CMP) can be prevented or reduced.


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Jang, Sung. (2009). Semiconductor device and method of forming metal interconnection layer thereof (U.S. Patent No. 7633161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7633161

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