The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Mar. 19, 2007
Applicants:
Tobin J. Marks, Evanston, IL (US);
Peide YE, West Lafayette, IN (US);
Antonio Facchetti, Chicago, IL (US);
Gang LU, Midland, MI (US);
Han Chung Lin, West Lafayette, IN (US);
Inventors:
Tobin J. Marks, Evanston, IL (US);
Peide Ye, West Lafayette, IN (US);
Antonio Facchetti, Chicago, IL (US);
Gang Lu, Midland, MI (US);
Han Chung Lin, West Lafayette, IN (US);
Assignee:
Northwestern University, Evanston, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.