The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Jul. 21, 2006
Koujirou Matsui, Kanagawa, JP;
Koujirou Matsui, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
In view of micronizing semiconductor device and of suppressing current leakage in a shared contact allowing contact between a gate electrode and an impurity-diffused region, a semiconductor deviceincludes a first gate electrode, a fourth source/drain region, and a shared contact electrically connecting the both, wherein in a section taken along the gate length direction, the first gate electrodeand the fourth source/drain regionare disposed as being apart from each other, an element-isolating insulating filmis formed over the entire surface of a semiconductor substrateexposed therebetween, and the distance between the first gate electrodeand the fourth source/drain regionis made substantially equal to the width of the sidewall formed on the side face of the first gate electrode, when viewed in another section taken along the gate length direction.