The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Dec. 27, 2006
Shoichi Yamauchi, Obu, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Kyoko Okada, Nagoya, JP;
Shoichi Yamauchi, Obu, JP;
Hitoshi Yamaguchi, Nisshin, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Kyoko Okada, Nagoya, JP;
Denso Corporation, Kariya, JP;
Abstract
A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 μm. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27° C. and at 150° C. is smaller than 1.8.