The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2009

Filed:

Mar. 20, 2006
Applicant:

Shingo Hashimoto, Kanagawa, JP;

Inventor:

Shingo Hashimoto, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
Abstract

A field-effect transistor has: a substrate having a first cavity; a gate electrode buried in the substrate; and diffusion layers formed in the substrate and being in contact with the first cavity. A channel region is formed substantially perpendicular to a surface of the substrate between the diffusion layers.


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