The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Jan. 09, 2007
Ho-sun Paek, Suwon-si, KR;
Tae-hoon Jang, Seoul, KR;
Youn-joon Sung, Yongin-si, KR;
Tan Sakong, Suwon-si, KR;
Min-ho Yang, Suwon-si, KR;
Ho-sun Paek, Suwon-si, KR;
Tae-hoon Jang, Seoul, KR;
Youn-joon Sung, Yongin-si, KR;
Tan Sakong, Suwon-si, KR;
Min-ho Yang, Suwon-si, KR;
Abstract
A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.