The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Jun. 13, 2006
Ming-dou Ker, Hsinchu, TW;
Chih-kang Deng, Taipei, TW;
Tang-kui Tseng, Hsinchu, TW;
An Shih, Changhua, TW;
Sheng-chieh Yang, Taoyuan, TW;
Ming-Dou Ker, Hsinchu, TW;
Chih-Kang Deng, Taipei, TW;
Tang-Kui Tseng, Hsinchu, TW;
An Shih, Changhua, TW;
Sheng-Chieh Yang, Taoyuan, TW;
TPO Displays Corp., , TW;
Abstract
An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.